Skip to content
akaturk Academic measurement
Sign in Sign up

Academician

ELİF MARIL

Doktor Öğretim Üyesi

Karabük Üniversitesi Yenice Meslek Yüksekokulu Mülkiyet Koruma Ve Güvenlik Bölümü

Research topics OpenAlex
  1. Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  2. Yan Dal Fizik
Keywords YÖKSİS
Articles 13 YÖKSİS 13 · OpenAlex 0 Total citations 230 h-index 8 · OpenAlex OpenAlex coverage %92 matched 11 / 12 Q1 articles 3 Scopus · WoS Q1 5 Co-authors 16 5 Turkish institutions

Citation impact

Citation counts of the articles matched in OpenAlex, citing publications from Crossref and the Stanford/Elsevier list. Sources are shown separately and never added up.

OpenAlex YÖKSİS articles matched in OpenAlex: 11
h-index 8 Percentile in Türkiye: 77 #119 of 935 at their university by h-index
i10-index
8
Total citations
230
Top 23% in Türkiye
Per article
20.9
FWCI
2.04
1.00 = world average
World top 1%
0
World top 10%
5

Most cited articles

  1. The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2 graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature 2016 world top 10% 48 citations
  2. The effects of (Bi2Te3-Bi2O3-TeO2-PVP) organic interfacial film on the dielectric and electrical features of Al/p-Si (MS) Schottky barrier diodes (SBDs) 2020 world top 10% 46 citations
  3. Evaluation of Electric and Dielectric Properties of Metal–Semiconductor Structures With 2 GC-Doped-(Ca3Co4Ga0.001Ox) Interlayer 2018 world top 10% 32 citations
How is this computed?

h-index and citations are computed from the citation counts of this academic’s YÖKSİS articles matched in OpenAlex (not Google Scholar, WoS or Scopus). Unmatched articles are not included.

Citing publications Crossref 78 publications citing 12 DOI-bearing articles · 56 Türkiye-affiliated
  • 2019 11
  • 2020 23
  • 2021 33
  • 2022 7
  • 2025 2
  • 2026 2
  1. The light detection performance of the Al/DCJTB/n-Si Schottky type photodetector for a wide-range spectrum TR Theodore Azemtsop Manfo et al. · Optical Materials · 2026
  2. DOI 10.1016/j.physb.2025.418017 2026
  3. Admittance and Dielectric Characteristics of Al/MgO/p-Si Device Produced By Spraying Method TR Ö. Güllü et al. · Silicon · 2025
  4. DOI 10.1007/s10854-025-16037-7 2025
  5. The electrical characteristic of an MIS structure with biocompatible minerals doped (Brushite+Monetite: PVC) interface layer TR M. Ulusoy et al. · Microelectronic Engineering · 2022
  6. The structural and optical properties of GO: Temperature-dependent analysis of the electrical properties of Al/GO/p-type Si semiconductor structures TR Niyazi Berk et al. · Journal of Physics and Chemistry of Solids · 2022
  7. High Dielectric Performance of Heterojunction Structures Based on Spin-Coated Graphene-PVP Thin Film on Silicon With Gold Contacts for Organic Electronics TR Osman Cicek et al. · IEEE Transactions on Electron Devices · 2022
  8. Heterojunction diode application of yttrium ıron oxide (Y3Fe5O12) TR Ali Rıza Deniz et al. · Journal of Materials Science: Materials in Electronics · 2022
  9. DOI 10.1007/s12633-022-01767-8 2022
  10. DOI 10.1007/s11664-021-09391-9 2022
  11. DOI 10.1016/j.surfin.2022.101866 2022
  12. A comparison of electrical characteristics of Au/n-Si (MS) structures with PVC and (PVC: Sm 2 O 3 ) polymer interlayer TR Şemsettin Altındal et al. · Physica Scripta · 2021
  13. Frequency dependence of the dielectric properties of Au/(NG:PVP)/n-Si structures TR Ahmet Muhammed Akbaş et al. · Journal of Materials Science: Materials in Electronics · 2021
  14. The effect of PVP: BaTiO 3 interlayer on the conduction mechanism and electrical properties at MPS structures TR Ali Barkhordari et al. · Physica Scripta · 2021 · cites 2 articles of this academic
  15. Comparison of the electrical and impedance properties of Au/(ZnOMn:PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation TR Şemsettin Altındal et al. · Physica Scripta · 2021
  16. On the changes in the dielectric, electric modulus, and ac electrical-conductivity in the Al/(C29H32O17)/p-Si (MPS) structures in wide range of frequency and voltage TR Esra Erbilen Tanrıkulu et al. · Physica B: Condensed Matter · 2021
  17. Electrical characterization of Au/n-Si (MS) diode with and without graphene-polyvinylpyrrolidone (Gr-PVP) interface layer TR Adem Tataroğlu et al. · Journal of Materials Science: Materials in Electronics · 2021
  18. Study on preparation of graphene oxide thin film layers: the electrical and dielectric characteristics of Au/GO/n-type Si junction structures TR Ahmet Kılçık et al. · Journal of Materials Science: Materials in Electronics · 2021
  19. The reverse bias current–voltage–temperature (I–V–T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80–380 K TR Ç. Ş. Güçlü et al. · Journal of Materials Science: Materials in Electronics · 2021 · cites 2 articles of this academic
  20. Effect of (Co–TeO2-doped polyvinylpyrrolidone) organic interlayer on the electrophysical characteristics of Al/p-Si (MS) structures TR Javid Farazin et al. · Journal of Materials Science: Materials in Electronics · 2021
  21. Dielectric Properties of PVP: BaTiO3 Interlayer in the Al/PVP: BaTiO3/P-Si Structure TR Ali Barkhordari et al. · Silicon · 2021 · cites 2 articles of this academic
  22. Graphene doped (Bi2Te3–Bi2O3–TeO2): PVP dielectrics in metal–semiconductor structures TR Yosef Badali et al. · Applied Physics A · 2021
  23. Dielectric characterization of Al/PCBM:ZnO/p-Si structures for wide-range frequency TR Dilber Esra Yildiz et al. · Bulletin of Materials Science · 2021
  24. Frequency Response of Metal–Semiconductor Structures With Thin-Films Sapphire Interlayer by ALD Technique TR Serhat Orkun Tan et al. · IEEE Transactions on Electron Devices · 2021
  25. The effect of (PVP-Cu2Te) organic interlayer on the electrical parameters of Al/p-Si Schottky barrier diodes (SBDs) at room temperature TR Elif Marıl · Physica B: Condensed Matter · 2021
  26. Role of Reduced Graphene Oxide-Gold Nanoparticle Composites on Au/Au-RGO/p-Si/Al Structure Depending on Sample Temperature TR M. Sağlam et al. · Journal of Electronic Materials · 2021
  27. Interpretation of the I–V, C–V and G/ω-V characteristics of the Au/ZnS/n-GaAs/In structure depending on annealing temperature TR A. Baltakesmez et al. · Physica B: Condensed Matter · 2021
  28. Dielectric Properties of Au/SrTiO3/p-Si Structure Obtained by RF Magnetron Sputtering in a Wide Frequency Range TR Barış Kınacı · Silicon · 2021
  29. NOA61 photopolymer as an interface for Al/NOA61/p-Si/Al heterojunction MPS device TR Şadan Özden et al. · Journal of Materials Science: Materials in Electronics · 2021 · cites 2 articles of this academic
  30. Comparison of dielectric characteristics for metal–semiconductor structures fabricated with different interlayers thicknesses TR Bilal Arslan et al. · Journal of Materials Science: Materials in Electronics · 2021

Showing the 30 most recent.

Where does this list come from?

Extracted from the reference lists in Crossref’s public March 2026 data file; 18.4% of the file has been processed, so the list may be incomplete. Crossref citations are never added to or compared with the OpenAlex citation counts; the two sources have different coverage.

Field ranking

Position in the main-field, side-field and keyword cohorts by YÖKSİS article score; each card opens that ranking.

YÖKSİS ?
Keyword rankings 3

Works 13

YÖKSİS and OpenAlex records: index distribution, journals published in, a filterable article list and the other output types.

Indexes and citation percentiles

?
TR Index 0 articles
OpenAlex citation percentile
Top 1%0
Top 10%6
Avg · n 12 %75.8
Other counts

Scopus (SJR)

  • YÖKSİS rows 11

WoS (JCR)

  • YÖKSİS rows 11

Articles

Articles with YÖKSİS and OpenAlex source split; narrow by quartile or TR Index.

13articles

Journals with publications

8 journals

Narrow down

Scopus (SJR)
Q13 Q28 Q30 Q40
WoS (JCR)
Q15 Q24 Q32 Q40
TR Index
0articles

Article list

  1. 2026 Admittance behavior and dielectric loss mechanisms in Al/PANI-Silicene/n-Si heterojunctions JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS DOI 10.1007/s10854-026-16902-z YÖKSİS SJR Q2 JCR Q2 OpenAlex top 10% OpenAlex 90.4%
  2. 2026 Admittance spectroscopy and dielectric analysis of polyaniline–borophene composite interlayers in Al/n-Si heterojunctions Physica B: Condensed Matter DOI https://www.sciencedirect.com/science/article/abs/pii/S0921452626005843 YÖKSİS SJR Q2 JCR Q2 OpenAlex 35.1%
  3. 2021 THE EFFECTIVE ATOMIC NUMBERS AND THE EFFECTIVE ELECTRON NUMBERS OF SOME STEELS AT DIFFERENT GAMMA ENERGIES International Journal of Innovations in Engineering Research and Technology (IJIERT) DOI 10.17605/OSF.IO/EHUZ8 YÖKSİS
  4. 2020 The effects of (Bi2Te3-Bi2O3-TeO2-PVP) organic interfacial film on the dielectric and electrical features of Al/p-Si (MS) Schottky barrier diodes (SBDs) Physica B: Condensed Matter DOI 10.1016/j.physb.2019.411958 YÖKSİS SJR Q2 JCR Q3 OpenAlex top 10% OpenAlex 94.1%
  5. 2020 The effect of (PVP-Cu2Te) organic interlayer on the electrical parameters of Al/p-Si Schottky barrier diodes (SBDs) at room temperature Physica B: Condensed Matter DOI 10.1016/j.physb.2020.412732 YÖKSİS SJR Q2 JCR Q3 OpenAlex 71.8%
  6. 2019 The Investigation of Temperature Dependent Reverse Bias Capacitance-Voltage (C-V) Characteristics of Au/Ppy/N-Si (MPS) Type Schottky Barrier Diodes (Sbds) at 100 Khz and 500 Khz Journal of the Institute of Science and Technology DOI 10.21597/jist.541435 YÖKSİS OpenAlex 11.3%
  7. 2018 Evaluation of Electric and Dielectric Properties of Metal–Semiconductor Structures With 2 GC-Doped-(Ca3Co4Ga0.001Ox) Interlayer IEEE Transactions on Electron Devices DOI 10.1109/TED.2018.2859907 YÖKSİS SJR Q1 JCR Q2 OpenAlex top 10% OpenAlex 92.3%
  8. 2016 The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2 graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature Microelectronic Engineering DOI 10.1016/j.mee.2015.10.012 YÖKSİS SJR Q2 JCR Q2 OpenAlex top 10% OpenAlex 94.4%
  9. 2015 On double exponential forward bias current-voltage (I–V) characteristics of Au/Ca sub3/sub Co sub4/sub Ga sub0.001/sub O subx/sub /n-Si/Au (MIS) type structures in temperature range of 80–340 K/title Philosophical Magazine DOI 10.1080/14786435.2015.1009517 YÖKSİS SJR Q1 JCR Q1 OpenAlex 70.8%
  10. 2015 On the temperature dependent forward bias current–voltage (I–V) characteristics in Au/2 graphene–cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2015.05.029 YÖKSİS SJR Q2 JCR Q1 OpenAlex top 10% OpenAlex 92.4%
  11. 2015 On the temperature dependent forward bias current-voltage (I-V) characteristics in Au/2% graphene-cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING DOI https://www.sciencedirect.com/science/article/abs/pii/S1369800115003571?getft_integrator=clarivate&pes=vor&utm_source=clarivate YÖKSİS SJR Q2 JCR Q1 OpenAlex top 10% OpenAlex 92.4%
  12. 2015 On the analysis of the leakage current in Au/Ca3Co4Ga0.001Ox/n-Si structure in the temperature range of 80–340K Materials Science in Semiconductor Processing DOI 10.1016/j.mssp.2014.12.005 YÖKSİS SJR Q2 JCR Q1 OpenAlex 82.5%
  13. 2015 Electronic transport of Au/(Ca1.9Pr0.1Co4Ox)/n-Si structures analysed over a wide temperature range PHILOSOPHICAL MAGAZINE DOI 10.1080/14786435.2015.1033029 YÖKSİS SJR Q1 JCR Q1 OpenAlex 81.8%

Proceedings 6 See all (6) →

  1. 2019 THE INVESTIGATION OF NSS, RS AND INTERFACIALLAYER ON THE ELECTRICAL CHARACTERISTICS OFAu/ Ca3Co4Ga0.001OX /n-Si/Au International Natural Science, Engineering and Materials Technology ConferenceSep 9-10, 2019, İstanbul / TURKEY
  2. 2018 Investigation of Admittance Characteristics of Au/2 graphene-cobalt doped (Ca3Co4Ga0.001Ox)/n-Si MIS structure 5th Internatıonal conference on materials science and nanotechnology for next generation (MSNG2018)
  3. 2019 Temperature Dependent Current-Transport Mechanisms(CTMs) in the Al/Al2O3/p-Si (MIS) Diodes (SDs) UsingCurrent-Voltage-Temperature (I-V-T) Characteristics in theTemperature Range of 200-320 K 1ST INTERNATIONAL CONFERENCE ON OPTOELECTRONICS , APLIED OPTİCS AND MICROELECTRONICS
  4. 2019 Temperature Dependent Barrier Height, Ideality Factor,Series Resistance of the Al/Al2O3/p-Si (MIS) Diodes UsingCheung’s Functions in Temperature Range of 200-320 K 𝟏st International Conference on Optoelectronics, Applied Optics and Microelectronics
  5. 2019 8. BOZOK ÇALIŞTAYI 8. BOZOK ÇALIŞTAYI

← Back to academicians

Collaboration network

From the author lists of YÖKSİS publication records. Duplicate records of a work count once; institutions are co-authors’ current YÖKSİS affiliations.

Co-authors
16
With an akaturk profile
6
Turkish institutions
5
Co-authored works
%77

Academic co-authors 6

  1. ABDULLAH KARACA Doktor Öğretim Üyesi · Yozgat Bozok Üniversitesi 2
  2. DİLBER ESRA YILDIZ Profesör · Hitit Üniversitesi 2
  3. MURAT YILDIRIM Profesör · Selçuk Üniversitesi 2
  4. NEVİN TAŞALTIN Profesör · Maltepe Üniversitesi 2
  5. HAYRİYE GÖKÇEN ÇETİNKAYA Profesör · Gazi Üniversitesi 1
  6. SERHAT ORKUN TAN Profesör · Karabük Üniversitesi same university 1

National collaboration 5 institutions

Within own university1 joint works · Karabük Üniversitesi

  1. Hitit Üniversitesi 2 works · 1 academics
  2. Maltepe Üniversitesi 2 works · 1 academics
  3. Selçuk Üniversitesi 2 works · 1 academics
  4. Yozgat Bozok Üniversitesi 2 works · 1 academics
  5. Gazi Üniversitesi 1 works · 1 academics

Other co-authors (incl. international) 10

ŞEMSETTİN ALTINDAL 7AHMET KAYA 5İBRAHİM USLU 4Serhat Koçyiğit 3ALI AKBAR HUSSAINIAZİZİAN YASHARGİVİ PİRGHOLİHASAN GÜMÜŞJAVİT FARAZİNSahar Alialy

Authors without an akaturk profile (international researchers, retired or former academics, students, clinicians) are grouped by name spelling; short forms such as “Gulluce M.” join the single full name they match.