Silicon Nanostructures and Photoluminescence

Thin-film crystalline silicon (c-Si) solar cells with light-trapping structures can enhance light absorption within the semiconductor absorber layer and reduce material usage. Here we demonstrate that an inverted nanopyramid light-trapping scheme for c-Si thin films, fabricated at wafer scale via a low-cost wet etchin…

• SELÇUK YERCİ

No abstract yet.

• SERAP GÜNEŞ

Silicon-based mesoporous nanoparticles have been extensively studied to meet the challenges in the drug delivery. Functionality of these nanoparticles depends on their properties which are often changing as a function of particle size and surrounding medium. Widely used characterization methods, dynamic light scatteri…

• DİDEM ŞEN KARAMAN

Only ten micrometer thick crystalline silicon solar cells deliver a short-circuit current of 34.5 mA cm(-2) and power conversion efficiency of 15.7%. The record performance for a crystalline silicon solar cell of such thinness is enabled by an advanced light-trapping design incorporating a 2D inverted pyramid photonic…

• SELÇUK YERCİ

Optical modulators are commonly used in communication and information technology to control intensity, phase, or polarization of light. Electro-optic, electroabsorption, and acousto-optic modulators based on semiconductors and compound semiconductors have been used to control the intensity of light. Because of gate tu…

• EMRE OZAN POLAT

No abstract yet.

• FERİDUN AY

Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the host crystal, resulting in the localization of excitons. Due to the…

• PINAR DOĞAN

The nonpolymeric organic compound rhodamine-101 (Rh101) film on a n-type Si or p-type Si substrate has been formed by means of the evaporation process and the Sn/rhodamine-101/Si contacts have been fabricated. The Sn∕Rh101∕n-Si and Sn∕Rh101∕p-Si contacts have rectifying contact behavior with the barrier height (BH) va…

• CABİR TEMİRCİ

The nonpolymeric organic compound rhodamine-101 (Rh101) film on a n-type Si or p-type Si substrate has been formed by means of the evaporation process and the Sn/rhodamine-101/Si contacts have been fabricated. The Sn∕Rh101∕n-Si and Sn∕Rh101∕p-Si contacts have rectifying contact behavior with the barrier height (BH) va…

• MUZAFFER ÇAKAR

The nonpolymeric organic compound rhodamine-101 (Rh101) film on a n-type Si or p-type Si substrate has been formed by means of the evaporation process and the Sn/rhodamine-101/Si contacts have been fabricated. The Sn∕Rh101∕n-Si and Sn∕Rh101∕p-Si contacts have rectifying contact behavior with the barrier height (BH) va…

• ŞÜKRÜ KARATAŞ

The nonpolymeric organic compound rhodamine-101 (Rh101) film on a n-type Si or p-type Si substrate has been formed by means of the evaporation process and the Sn/rhodamine-101/Si contacts have been fabricated. The Sn∕Rh101∕n-Si and Sn∕Rh101∕p-Si contacts have rectifying contact behavior with the barrier height (BH) va…

• NEZİR YILDIRIM

Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows…

• FERİDUN AY