Semiconductor materials and devices

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• MEHMET CENGİZ ONBAŞLI

Variational and fixed-node Green's-function Monte Carlo calculations have been performed to find the ground-state properties of the two-dimensional electron gas in the density range 1\ensuremath{\le}${r}_{s}$\ensuremath{\le}100. Our calculations predict a Wigner crystallization at the density ${r}_{s}$\ensuremath{\sim…

The design, synthesis, and characterization of new high-performance n-channel molecular/polymeric semiconductors that are solution-processable and air-stable is of great interest for the development of p-n junctions, bipolar transistors, and organic complementary circuitry (CMOS). While over the past two decades there…

• HAKAN USTA

A new metallization scheme has been developed for obtaining very low Ohmic contact to n-GaN. The metallization technique involves the deposition of a composite metal layer Ti/Al/Ni/Au (150 Å/2200 Å/400 Å/500 Å) on n-GaN preceded by a reactive ion etching (RIE) process which most likely renders the surface highly n typ…

We present a study of mechanical, electronic and magnetic properties of two-dimensional (2D), monolayer of silicon carbide (SiC) in honeycomb structure and its quasi-one-dimensional (quasi-1D) armchair nanoribbons using first-principles plane-wave method. In order to reveal dimensionality effects, a brief study of thr…

• SEYMUR JAHANGIROV

Its good electrical conductivity, fast ion diffusion, good average open-circuit voltage and theoretical capacity suggest that the Mo 2 C monolayer can be utilized as a promising anode material.

First-principles total-energy calculations suggest that interstitial hydrogen impurity forms a shallow donor in SnO2, CdO, and ZnO, but a deep donor in MgO. We generalize this result to other oxides by recognizing that there exist a “hydrogen pinning level” at about 3.0±0.4 eV below vacuum. Materials such as Ag2O, HgO…

• ÇETİN KILIÇ

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• FERİDUN AY

No abstract yet.

• ŞÜKRÜ KARATAŞ

The current–voltage (I–V) characteristics of CrNiCo alloy Schottky contacts on a molecular-beam epitaxy n-GaAs substrate have been measured over the temperature range of 130–330 K and have been interpreted based on the assumption of a Gaussian distribution of barrier heights due to barrier height inhomogeneities that…

• AHMET GÜMÜŞ

A self-terminating rapid electrodeposition process for controlled growth of platinum (Pt) monolayer films from a K(2)PtCl(4)-NaCl electrolyte has been developed that is tantamount to wet atomic layer deposition. Despite the deposition overpotential being in excess of 1 volt, Pt deposition was quenched at potentials ju…

• DİNÇER GÖKCEN

A combination of scanning transmission electron microscopy, electron energy loss spectroscopy, and ab initio calculations reveal striking electronic structure differences between two distinct single substitutional Si defect geometries in graphene. Optimised acquisition conditions allow for exceptional signal-to-noise…

• RECEP ZAN