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Academician

SEDAT ZEYREK

Doçent

Kütahya Dumlupınar Üniversitesi Fen-Edebiyat Fakültesi Fizik Bölümü

Research topics OpenAlex
  1. Ana Dal Fen Bilimleri ve Matematik Temel Alanı
  2. Yan Dal Fizik
Keywords YÖKSİS
Articles 19 YÖKSİS 19 · OpenAlex 0 Total citations 237 h-index 7 · OpenAlex OpenAlex coverage %53 matched 10 / 19 Q1 articles 1 Scopus · WoS Q1 1 Co-authors 22 4 Turkish institutions

Citation impact

Citation counts of the articles matched in OpenAlex, citing publications from Crossref and the Stanford/Elsevier list. Sources are shown separately and never added up.

OpenAlex YÖKSİS articles matched in OpenAlex: 10 + YÖKSİS · co-author record: 1
h-index 7 Percentile in Türkiye: 67 #79 of 778 at their university by h-index
i10-index
6
Total citations
237
Top 27% in Türkiye
Per article
21.5
FWCI
1.74
1.00 = world average
World top 1%
0
World top 10%
4

Most cited articles

  1. On the profile of temperature dependent series resistance in Al Si3N4 p Si MIS Schottky diodes 2006 world top 10% 76 citations
  2. A compare of electrical characteristics in Al p Si MS and Al C20H12 p Si MPS type diodes using current voltage I V and capacitance voltage C V measurements 2015 world top 10% 60 citations
  3. Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range 2017 world top 10% 34 citations
How is this computed?

h-index and citations are computed from the citation counts of this academic’s YÖKSİS articles matched in OpenAlex (not Google Scholar, WoS or Scopus). Unmatched articles are not included. 1 articles (60 citations) tagged with this academic’s YÖK author id in co-authors’ YÖKSİS records count only towards citations, h-index and i10; article counts, percentiles and rankings use their own YÖKSİS list. h-index on the OpenAlex author profile: 11.

Citing publications Crossref 30 publications citing 10 DOI-bearing articles · 22 Türkiye-affiliated
  • 2019 8
  • 2020 8
  • 2021 7
  • 2022 1
  • 2025 3
  • 2026 3
  1. BODIPY and Aza-BODIPY based Schottky-type photodiodes for optoelectronic applications TR Gökhan Sevinç et al. · Inorganic Chemistry Communications · 2026
  2. A comparison of the effects of different light intensities on the current-voltage characteristics of the Si3N4 interface with various thicknesses grown on the (Au: Ti)/n-GaAs (MS) structure TR Mahmut Bucurgat et al. · Optical Materials · 2026
  3. Investigation Of Electrical Characteristics, Voltage-Dependent Interface States, And Series Resistance of Au/AgNiO/n-Si Structures Using Low-High Frequency Capacitances TR Esra Yükseltürk · Journal of the Institute of Science and Technology · 2026 · cites 2 articles of this academic
  4. Impedance measurement to characterize dielectric response of Au-Si Schottky structure with PVC: cr interfaces TR E. Yükseltürk · Polymer Bulletin · 2025
  5. DOI 10.1109/ted.2025.3626337 2025
  6. DOI 10.1007/s10854-025-16166-z 2025
  7. Temperature Dependent Current Transport Mechanism of Photopolymer Based Al/NOA60/p-Si MPS Device TR Şadan Özden et al. · Journal of Inorganic and Organometallic Polymers and Materials · 2022
  8. Illumination and voltage effects on the forward and reverse bias current–voltage (I-V) characteristics in In/In2S3/p-Si photodiodes TR Esra Yükseltürk et al. · Journal of Materials Science: Materials in Electronics · 2021
  9. The investigation of current condition mechanism of Al/Y2O3/p-Si Schottky barrier diodes in wide range temperature and illuminate TR Ömer Sevgili et al. · Microelectronics Reliability · 2021
  10. The investigation of the electrical characteristics and photo-response properties of the Al/(CMAT)/p-Si structures TR Omer Sevgi̇li̇ · Solid State Sciences · 2021
  11. Effect of illumination on the electrical characteristics of Au/n-GaP/Al and Au/Chlorophyll-a/n-GaP/Al structures TR Fikriye Şeyma Kaya et al. · Materials Science and Engineering: B · 2021
  12. Interpretation of the I–V, C–V and G/ω-V characteristics of the Au/ZnS/n-GaAs/In structure depending on annealing temperature TR A. Baltakesmez et al. · Physica B: Condensed Matter · 2021
  13. Current-voltage characteristics of p-CuO/n-Si heterojunction for solar cell application TR Reşit Özmenteş · Materials Today: Proceedings · 2021
  14. DOI 10.1149/2162-8777/ac26d9 2021
  15. The comparison of Co/hematoxylin/n-Si and Co/hematoxylin/p-Si devices as rectifier for a wide range temperature TR Mehmet Yilmaz et al. · Materials Science in Semiconductor Processing · 2020
  16. On the studies of capacitance–voltage and impedance spectroscopy of an Ni/(GO-Fe3O4)/n-Si heterojunction device over a wide temperature range TR Ilknur Gumus et al. · Semiconductor Science and Technology · 2020
  17. Determination of Structural Properties of Some Important Polymers Used as Interfacial Layer in Fabrication of Schottky Barrier Diodes (SBDs) TR Çiğdem BİLKAN · Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi · 2020
  18. Detailed Consideration of Electrical and Dielectric Properties of Au/Ni/n-Si MS Structure in a Wide Frequency Range TR Yunus Özen · Silicon · 2020
  19. Au/C20H12/n-Si (MPS) Yapının Elektriksel Özelliklerinin Frekansa Bağlı İncelenmesi TR Seda BENGİ · Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi · 2020 · cites 2 articles of this academic
  20. Investigation of the electrical properties of diodes by crosschecking dependence on the presence of (nanocarbon-PVP) interface layer TR Çiğdem Bilkan · Journal of Materials Science: Materials in Electronics · 2020
  21. DOI 10.1088/2053-1591/aba818 2020 · cites 2 articles of this academic
  22. DOI 10.1016/j.tsf.2020.138229 2020
  23. Frequency and voltage dependent electrical and dielectric properties of Ag/nGO doped PVA/p-Si sandwich structure at room temperature TR Şükrü Karataş · Journal of Sandwich Structures & Materials · 2019
  24. The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature TR Adem Koçyiğit et al. · Journal of Materials Science: Materials in Electronics · 2019
  25. The Aromatic Thermosetting Copolyester for Schottky Diode Applications in a Wide Temperature Range TR İkram Orak et al. · Journal of Electronic Materials · 2019
  26. On the profile of temperature dependent main electrical parameters in Al/P3HT/p-Si (MPS) structures at low temperatures TR E. Yükseltürk et al. · Materials Today: Proceedings · 2019
  27. Schottky diyot tabanlı UV detektörlerde seri direnç etkileri TR Şadan ÖZDEN · Balıkesir Üniversitesi Fen Bilimleri Enstitüsü Dergisi · 2019
  28. DOI 10.1109/jeds.2019.2900542 2019
  29. DOI 10.1007/s11182-019-01646-7 2019
  30. DOI 10.1007/s12043-019-1868-2 2019
Where does this list come from?

Extracted from the reference lists in Crossref’s public March 2026 data file; 20.3% of the file has been processed, so the list may be incomplete. Crossref citations are never added to or compared with the OpenAlex citation counts; the two sources have different coverage.

Field ranking

Position in the main-field, side-field and keyword cohorts by YÖKSİS article score; each card opens that ranking.

YÖKSİS ?
Keyword rankings 2

Works 19

YÖKSİS and OpenAlex records: index distribution, journals published in, a filterable article list and the other output types.

Indexes and citation percentiles

?
TR Index 1 articles
OpenAlex citation percentile
Top 1%0
Top 10%3
Avg · n 10 %66.5
Other counts

Scopus (SJR)

  • YÖKSİS rows 8

WoS (JCR)

  • YÖKSİS rows 6

Articles

Articles with YÖKSİS and OpenAlex source split; narrow by quartile or TR Index.

19articles

Journals with publications

8 journals

Narrow down

Scopus (SJR)
Q11 Q25 Q32 Q40
WoS (JCR)
Q11 Q23 Q31 Q41
TR Index
1articles

Article list

  1. 2024 Examination of Electrical and Dielectric Parameters of Au/n-Si Schottky Barrier Diodes (SBDs) with Organic Perylene Interlayer Using Impedance Measurements Under Various Illumination Intensities Journal of Electronic Materials DOI 10.1007/s11664-024-11213-7 YÖKSİS SJR Q2 JCR Q2 OpenAlex top 10% OpenAlex 94.4%
  2. 2024 Determining the dielectric characteristics of the Au/C20H12/n-Si (MPS) structure over a wide temperature and voltage INDIAN JOURNAL OF PHYSICS DOI 10.1007/s12648-023-02985-5 YÖKSİS SJR Q3 JCR Q3 OpenAlex 84.4%
  3. 2023 Analysis of Series Resistance's (RS) Impact on Ag/Perylene/n-Si Schottky Barrier Diode (SBD) in Various Techniques Gu J Sci, Part:A DOI 10.54287/gujsa.1216478 YÖKSİS TR Index OpenAlex 53.4%
  4. 2019 The Investigation of Frequency and Voltage Dependence of Electrical Characteristics in Al/P3HT/p-Si (MPS) Structures Materials Today: Proceedings DOI 10.1016/j.matpr.2019.06.672 YÖKSİS SJR Q2 OpenAlex 49.6%
  5. 2019 On the profile of temperature dependent main electrical parameters in Al/P3HT/p-Si (MPS) structures at low temperatures Materials Today: Proceedings DOI 10.1016/j.matpr.2019.06.673 YÖKSİS SJR Q2 OpenAlex 49.6%
  6. 2017 Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range Journal of Materials Science: Materials in Electronics DOI 10.1007/s10854-016-6011-2 YÖKSİS SJR Q2 JCR Q2 OpenAlex top 10% OpenAlex 92.3%
  7. 2016 The Effects Illumination Electrical Parameters on Au P3HT n Si Schottky Barrier Diode AIP Conference Proceeding DOI 10.1063/1.4944259 YÖKSİS OpenAlex 2.7%
  8. 2015 The Effect of Interface States and Series Resistance on Current Voltage Characteristics in MIS Schottky Diodes Afyon Kocatepe Üniversitesi Fen ve Mühendislik Bilimleri Dergisi DOI 10.5578/fmbd.9657 YÖKSİS OpenAlex 59.6%
  9. 2015 A compare of electrical characteristics in Al p Si MS and Al C20H12 p Si MPS type diodes using current voltage I V and capacitance voltage C V measurements Materials Science in Semiconductor Processing YÖKSİS
  10. 2014 Electrical and dielectric properties of Al p Si and Al perylene p Si type diodes in a wide frequency range Chinese Physics B YÖKSİS SJR Q2 JCR Q2 OpenAlex 87.1%
  11. 2013 The C V and G V Electrical Characteristics of 60Co ray IrradiatedAl Si3N4 p Si MIS Structures Chinese Physics Letters DOI www.cpl.iphy.ac.cn YÖKSİS
  12. 2013 The effect of series resistance and interface states on the frequency dependent C V and G w V characteristics of Al perylene p Si MPS type Schottky barrier diodes Current Applied Physics DOI www.elsevier.com YÖKSİS
  13. 2008 ANALYSIS OF FORMATION OF SILICON NITRIDE ON Si 100 BY ELECTROCHEMICAL ANODIZATION TECHNIQUE Afyon Kocatepe Üniversitesi Fen Bilimleri Dergisi DOI www.fenbil.aku.edu.tr YÖKSİS
  14. 2008 The double Gaussian distribution of inhomogeneous barrier heights in Al GaN p GaAs MIS Schottky diodes in wide temperature range Brazilian Journal of Physics DOI www.sbfisica.org.br/bjp/ YÖKSİS
  15. 2006 Frequency dependent capacitance and conductance voltage characteristics of Al Si3N4 p Si 100 MIS diodes Microelectronic Engineering DOI www.elsevier.com YÖKSİS
  16. 2006 On the profile of temperature dependent series resistance in Al Si3N4 p Si MIS Schottky diodes Microelectronic Engineering DOI www.elsevier.com YÖKSİS SJR Q1 JCR Q1 OpenAlex top 10% OpenAlex 91.6%
  17. 2006 Current transport mechanism in Al Si3N4 p Si MIS Schottky barrier diodes at low temperatures Applied Surface Secience DOI www.elsevier.com YÖKSİS
  18. 2000 Accumulated Processes in Kinetic of Mechanical and Electrical destruction of polymers Dumlupınar Üni.Fen Bilimleri Dergisi Ocak 2000 YÖKSİS
  19. 2000 Durable Properties and Structure of Composition of Polypropylene Polyethylene Obtained by Different Ways Dumlupınar Üni.Fen Bilimleri Dergisi Ocak 2000 YÖKSİS

Projects 1

  1. 2008 Kimyasal Püskürtme Tekniği (Chemical Spray Pyrolysis;CSP) ile Yarıiletken İnce Film Üretilmesi Yükseköğretim Kurumları tarafından destekli bilimsel araştırma projesi · Tamamlandı 2008-07-01 – 2009-07-02

Proceedings 21 See all (21) →

  1. 2017 On the profile of temperature dependent main electrical parameters in Al/P3HT/p-Si (MPS) structures at low temperatures InternationalCongress on Semiconductor Materials and Devices (ICSMD-2017)
  2. 2017 The Investigation of Frequency and Voltage Dependence of Electrical Characteristics in Al/P3HT/p-Si (MPS) Structures InternationalCongress on Semiconductor Materials and Devices (ICSMD-2017)
  3. — Al/P3HT/p-Si (MPS) Schottky Diyotlarının Oda Sıcaklığında Akım-Gerilim Karakteristiklerinin I-V, Norde ve Cheung Metodu Kullanılarak İncelenmesi 23. Yoğun Madde Fiziği – Ankara Toplantısı
  4. — Al/P3HT/p-Si (MPS) Schottky Diyotların Akım-Gerilim Karakteristiklerinin Düşük Sıcaklık Aralığında İncelenmesi 23. Yoğun Madde Fiziği Ankara Toplantısı
  5. 2022 Analysis of the Electrical Characteristics of Al/ GaN/ p-GaAs Structure at High Temperatures 9th International Conference on Materials Science and Nanotechnology for Next Generation Gazi University, Ankara, Turkey, Sep 22-24, 2022

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Collaboration network

From the author lists of YÖKSİS publication records. Duplicate records of a work count once; institutions are co-authors’ current YÖKSİS affiliations.

Co-authors
22
With an akaturk profile
5
Turkish institutions
4
Co-authored works
%95

Academic co-authors 5

  1. ESRA YÜKSELTÜRK Doçent · Ostim Teknik Üniversitesi 4
  2. SEDA BENGİ Doçent · Başkent Üniversitesi 3
  3. HURİYE SENEM AYDOĞU Profesör · Kütahya Dumlupınar Üniversitesi same university 2
  4. SAİT EREN SAN Profesör · Kocaeli Üniversitesi 2
  5. ÇİĞDEM BİLKAN Profesör · Tokat Gaziosmanpaşa Üniversitesi 1

National collaboration 4 institutions

Within own university2 joint works · Kütahya Dumlupınar Üniversitesi

  1. Ostim Teknik Üniversitesi 4 works · 1 academics
  2. Başkent Üniversitesi 3 works · 1 academics
  3. Kocaeli Üniversitesi 2 works · 1 academics
  4. Tokat Gaziosmanpaşa Üniversitesi 1 works · 1 academics

Other co-authors (incl. international) 17

ŞEMSETTİN ALTINDAL 12MEHMET MAHİR BÜLBÜL 11HAYRETTİN YÜZER 4E HALİLOVA 2HASAN MEMMEDOV 2M ZEYNALOVA 2MEVLANA CELALETTİN BAYKUL 2S A ABBASOV 2T M VELİYEV 2İ ASKEROV 2AHMET KAYABİRDOĞAN SELÇUKERKAN ACAROĞLUH.G. ÇetinkayaK MORAKİMERVE ÇOTUKTURAN ALPER

Authors without an akaturk profile (international researchers, retired or former academics, students, clinicians) are grouped by name spelling; short forms such as “Gulluce M.” join the single full name they match.