Advancements in Semiconductor Devices and Circuit Design

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• ŞAHRAM MİNAYİ

We examine the scaling limits for planar single gate technology using the ultra-thin Si channel MOSFET. Characteristics for extreme scaled devices with physical gate lengths down to 6 nm and SOI channels as thin as 4 nm are presented. For the first time, we report ring oscillators with 26 nm gate lengths and ultra-thi…

In this paper, using a minimum number of passive components, i.e., new grounded and floating inductance simulators, grounded capacitance multipliers, and frequency-dependent negative resistors (FDNRs) based on one/two modified current-feedback operational amplifiers (MCFOAs), are proposed. The type of the simulators d…

• ERKAN YÜCE

The voltage differencing transconductance amplifier (VDTA) is a recently introduced active element for analog signal processing. However, the realization of VDTA is not given by any author yet. In this work, a new and simple CMOS realization of VDTA is presented. The proposed block has two voltage inputs and two kinds…

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• ENGİN AFACAN

We have demonstrated a low-temperature cleaning technique for removing both carbon and oxygen from a Si surface. It uses a combination of ex situ wet chemical clean and an in situ remote rf plasma-excited hydrogen clean in an ultrahigh vacuum chamber. Since a remote rf plasma is used, there is insignificant plasma dam…

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• ŞAHRAM MİNAYİ

No abstract yet.

• ERKAN YÜCE

We study the current and charge distribution in a two-dimensional electron system, under the conditions of the integer quantized Hall effect, on the basis of a quasilocal transport model, that includes nonlinear screening effects on the conductivity via the self-consistently calculated density profile. The existence o…

• AFİF SIDDIKİ

A thermal activation energy of 710meV for hole emission from InAs∕GaAs quantum dots (QDs) across an Al0.9Ga0.1As barrier is determined by using time-resolved capacitance spectroscopy. A hole storage time of 1.6s at room temperature is directly measured, being three orders of magnitude longer than a typical dynamic ran…

• NAMIK AKÇAY

A dense and fast threshold-logic gate with a very high fan-in capacity is described. The gate performs sum-of-product and thresholding operations in an architecture comprising a poly-to-poly capacitor array and an inverter chain. The Boolean function performed by the gate is soft programmable. This is accomplished by…