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OpenAlex topic

Silicon Carbide Semiconductor Technologies

This page lists works and academicians tagged with an OpenAlex topic. It is not a YÖKSİS primary or secondary field.

OpenAlex 1,058 works 56 author topics

Works

1,058 works

  1. YÖKSİS SJR Q1 JCR Q1 OpenAlex top 1% OpenAlex 100.0%

    We present a study of mechanical, electronic and magnetic properties of two-dimensional (2D), monolayer of silicon carbide (SiC) in honeycomb structure and its quasi-one-dimensional (quasi-1D) armchair nanoribbons using first-principles plane-wave method. In order to reveal dimensionality effects, a brief study of thr…

  2. YÖKSİS SJR Q1 JCR Q1 OpenAlex top 10% OpenAlex 98.7%

    This paper presents a fundamental-frequency-modulated diode-clamped multilevel inverter (DCMLI) scheme for a three-phase stand-alone photovoltaic (PV) system. The system consists of five series-connected PV modules, a six-level DCMLI generating fundamental-modulation staircase three-phase output voltages, and a three-…

  3. OpenAlex top 10% OpenAlex 97.8%

    Eliminating harmonics in a multilevel converter in which the separate dc sources vary is considered. That is, given a desired fundamental output voltage, the problem is to find the switching times (angles) that produce the fundamental while not generating specifically chosen harmonics. Assuming that the separate dc so…

  4. YÖKSİS SJR Q1 JCR Q2 OpenAlex top 10% OpenAlex 92.1%

    In this paper, a new active snubber cell that overcomes most of the drawbacks of the normal "zero voltage transition-pulse width modulation" (ZVT-PWM) converter is proposed to contrive a new family of ZVT-PWM converters. A converter with the proposed snubber cell can also operate at light load conditions. All of the s…

  5. YÖKSİS SJR Q1 JCR Q1 OpenAlex top 1% OpenAlex 99.2%

    In this study, a new snubber cell is developed in order to increase the power density and the efficiency in pulsewidth modulation (PWM) converters and to decrease the EMI noise. The developed snubber cell provides main switch both to turn on with zero-voltage transition (ZVT) and to turn off with zero-current transiti…

  6. YÖKSİS SJR Q1 JCR Q1 OpenAlex top 1% OpenAlex 99.1%

    High quality n-ZnO films on commercial p-type 6H–SiC substrates have been grown by plasma-assisted molecular-beam epitaxy, and n-ZnO∕p-SiC heterojunction mesa structures have been fabricated. Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less th…

  7. YÖKSİS SJR Q2 JCR Q2 OpenAlex top 10% OpenAlex 97.2%

    This article presents an overview of state-of-art solutions, advances, and design and research trends in medium-voltage (MV) drive technologies-and also discusses the challenges and requirements associated with the use of such drives. The choice and deployment of MV drives in industries are associated with numerous re…

  8. YÖKSİS SJR Q1 JCR Q2 OpenAlex 87.9%

    In this paper, a new active snubber cell is proposed to contrive a new family of pulse width modulated (PWM) converters. This snubber cell provides zero voltage transition (ZVT) turn on and zero current transition (ZCT) turn off together for the main switch of a converter. Also, the snubber cell is implemented by usin…

  9. YÖKSİS SJR Q1 JCR Q2 OpenAlex top 10% OpenAlex 96.4%

    Novel, current collapse free, double heterostructure AlGaN/InGaN/GaN field effect transistors (DHFETs) are fabricated on the insulating SiC substrates. The simulations show that a combined effect of the bandgap offsets and polarization charges provides an excellent 2D carrier confinement. These devices demonstrate out…

  10. YÖKSİS SJR Q1 JCR Q1 OpenAlex top 10% OpenAlex 98.3%

    Silicon carbide is a wide-band-gap semiconductor suitable for high-power high-voltage devices and it has excellent properties for use in photoconductive semiconductor switches (PCSSs). PCSS were fabricated as planar structures on high-resistivity 4H–SiC and tested at dc bias voltages up to 1000 V. The typical maximum…

  11. YÖKSİS SJR Q1 JCR Q1 OpenAlex top 10% OpenAlex 96.7%

    In the phase shifted full bridge (PSFB) pulse width modulation (PWM) converter, external snubber capacitors are connected in parallel to insulated gate bipolar transistors (IGBTs) in order to decrease turn-off losses. The zero voltage transition (ZVT) condition is not provided at light loads, thus the parallel capacit…

  12. YÖKSİS SJR Q1 JCR Q1 OpenAlex top 10% OpenAlex 96.7%

    In the phase shifted full bridge (PSFB) pulse width modulation (PWM) converter, external snubber capacitors are connected in parallel to insulated gate bipolar transistors (IGBTs) in order to decrease turn-off losses. The zero voltage transition (ZVT) condition is not provided at light loads, thus the parallel capacit…

Academicians

56 academicians