Electron and X-Ray Spectroscopy Techniques

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• MEHMET KADRİ AYDINOL

The initial oxidation stages of perfect and defective graphitic surfaces exposed to atomic oxygen have been studied with a combined high-resolution photoemission spectroscopy (HR-PES) and density functional theory (DFT) computational approach. The resulting oxygen-containing surface functional groups are identified by…

• OSMAN BARIŞ MALCIOĞLU

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• MEHMET KADRİ AYDINOL

Distributions and atomic sites of transition metals and gold on suspended graphene were investigated via high-resolution scanning transmission electron microscopy, especially using atomic resolution high angle dark field imaging. All metals, albeit as singular atoms or atom aggregates, reside in the omni-present hydro…

• RECEP ZAN

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• SARP KAYA

Atomic resolution high angle annular dark field imaging of suspended, single-layer graphene, onto which the metals Cr, Ti, Pd, Ni, Al, and Au atoms had been deposited, was carried out in an aberration-corrected scanning transmission electron microscope. In combination with electron energy loss spectroscopy, employed t…

• RECEP ZAN

We demonstrate that 60-keV electron irradiation drives the diffusion of threefold-coordinated Si dopants in graphene by one lattice site at a time. First principles simulations reveal that each step is caused by an electron impact on a C atom next to the dopant. Although the atomic motion happens below our experimenta…

• RECEP ZAN

Increasingly researchers are looking to bring together perspectives across multiple scales, or to combine insights from different techniques, for the same region of interest. To this end, correlative microscopy has already yielded substantial new insights in two dimensions (2D). Here we develop correlative tomography…

• CEM ÖRNEK

Thermally grown SiO 2 layers on Si (100) substrate have been subjected to different external voltage bias during XPS analysis to induce changes in the measured binding energy difference between Si 4+ and Si 0 in Si2p and Si KLL regions. The Si2p binding energy difference increases from 3.2 to 4.8 for samples containin…

• ŞEFİK SÜZER

Thermally grown SiO 2 layers on Si (100) substrate have been subjected to different external voltage bias during XPS analysis to induce changes in the measured binding energy difference between Si 4+ and Si 0 in Si2p and Si KLL regions. The Si2p binding energy difference increases from 3.2 to 4.8 for samples containin…

• BURAK ÜLGÜT

HIPPIE is a soft X-ray beamline on the 3 GeV electron storage ring of the MAX IV Laboratory, equipped with a novel ambient-pressure X-ray photoelectron spectroscopy (APXPS) instrument. The endstation is dedicated to performing in situ and operando X-ray photoelectron spectroscopy experiments in the presence of a contr…

• SARP KAYA

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• SARP KAYA