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OpenAlex konusu

Integrated Circuits and Semiconductor Failure Analysis

Bu sayfa OpenAlex konu etiketine göre çalışmaları ve o konuda görünen akademisyenleri listeler. YÖKSİS temel alan / yan dal değildir.

OpenAlex 1.859 eser 62 yazar konusu

Çalışmalar

1.859 eser

  1. Temperature dependence of characteristic parameters of the H terminated Sn p Si 1 0 0 Schottky contacts 2003
    YÖKSİS SJR Q1 JCR Q2 OpenAlex üst %10 OpenAlex 96.7%

    Özet henüz yok.

  2. The role of interface states and series resistance on the I-V and C-V characteristics in Al/SnO2/p-Si Schottky diodes 2003
    YÖKSİS SJR Q1 JCR Q2 OpenAlex üst %10 OpenAlex 94.5%

    Özet henüz yok.

  3. The role of interface states and series resistance on the I V and C V characteristics in Al SnO2 p Si Schottky diodes 2003
    YÖKSİS SJR Q1 JCR Q2 OpenAlex üst %10 OpenAlex 94.5%

    Özet henüz yok.

  4. The role of interface states and series resistance on the I V and C V characteristics in Al SnO2 p Si Schottky diodes 2003
    YÖKSİS SJR Q1 JCR Q2 OpenAlex üst %10 OpenAlex 94.5%

    Özet henüz yok.

  5. High-speed tapping mode imaging with active Q control for atomic force microscopy 2000
    OpenAlex üst %10 OpenAlex 97.6%

    The speed of tapping mode imaging with the atomic force microscope (AFM) has been increased by over an order of magnitude. The enhanced operation is achieved by (1) increasing the instrument’s mechanical bandwidth and (2) actively controlling the cantilever’s dynamics. The instrument’s mechanical bandwidth is increase…

  6. Temperature and frequency dependent electrical and dielectric properties of Al SiO2 p Si MOS structure 2005
    YÖKSİS SJR Q1 JCR Q1 OpenAlex üst %10 OpenAlex 93.9%

    Özet henüz yok.

  7. Centimeter scale atomic force microscope imaging and lithography 1998
    OpenAlex üst %10 OpenAlex 98.8%

    We present a 4 mm2 image taken with a parallel array of 10 cantilevers, an image spanning 6.4 mm taken with 32 cantilevers, and lithography over a 100 mm2 area using an array of 50 cantilevers. All of these results represent scan areas that are orders of magnitude larger than that of a typical atomic force microscope…

  8. Fabrication and electrical characteristics of Schottky diode based on organic material 2008
    YÖKSİS SJR Q1 JCR Q2 OpenAlex üst %10 OpenAlex 97.6%

    Özet henüz yok.

  9. Fabrication and electrical characteristics of Schottky diode based on organic material 2008
    YÖKSİS SJR Q1 JCR Q2 OpenAlex üst %10 OpenAlex 97.6%

    Özet henüz yok.

  10. Interpreting the nonideal reverse bias C V characteristics and importance of the dependence of Schottky barrier height on applied voltage 1995
    YÖKSİS SJR Q2 JCR Q3 OpenAlex 67.7%

    Özet henüz yok.

  11. Interpreting the Nonideal Reverse Bias C V Characteristics and Importance of the Dependence of Schottky Barrier Height on Applied Voltage 1995
    YÖKSİS SJR Q2 JCR Q3 OpenAlex 67.7%

    Özet henüz yok.

  12. Interpreting the nonideal reverse bias C V characteristics and importance of the dependence of Schottky barrier height on applied voltage 1995
    YÖKSİS SJR Q2 JCR Q3 OpenAlex 69.1%

    Özet henüz yok.

Akademisyenler

62 akademisyen