Intersub-band Second Order Nonlinear Transitions in Asymmetric Double Delta-Doped GaAs Structures

OpenAlex İngilizce

In this study, second order harmonic generation (SHG) coefficient in asymmetric double delta doped wells (ADQW) were investigated for a uniform doping distribution model. The electronic properties of GaAs structure with ADQW, such as the potential profile, sub-band energy levels, wave functions and charge densities are calculated by self-consistent the Schrödinger and Poisson equations. According to the parameters used in this study, I have seen that for the doping concentration, SHG peak size in ADQW structure with the intersubband relaxation time gives the same peak magnitude value with for the doping concentration 5. Also, for the thickness of the donor distribution the peak size value of SHG with has approximately the same behavior with for the donor distribution thickness . The dependence on the structural parameters of the nonlinear transitions in the second order between the sub-bands is more important for the potential variations of the photodetectors and optical modulators. These structures will have an important place in the future research of quantum photo-electronic devices.