Effects of tail states on the conduction mechanisms in silicon carbide thin films with high carbon content

Yerel katalogda bu makaleye atıf yapan 6 yayın (OpenAlex referans eşleşmesi; tam dünya listesi değildir).

1. 2017 Effects of carbon content and plasma power on room temperature photoluminescence characteristics of hydrogenated amorphous silicon carbide thin films deposited by PECVDAtıf 13 · OpenAlex
2. 2012 Room temperature photoluminescence spectrum modeling of hydrogenated amorphous silicon carbide thin films by a joint density of tail states approach and its application to plasma deposited hydrogenated amorphous silicon carbide thin filmsAtıf 9 · OpenAlex
3. 2012 Room temperature photoluminescence spectrum modeling of hydrogenated amorphous silicon carbide thin films by a joint density of tail states approach and its application to plasma deposited hydrogenated amorphous silicon carbide thin filmsAtıf 9 · OpenAlex
4. 2018 Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin filmsAtıf 7 · OpenAlex
5. 2011 Investigation of electrical transport in PECVD grown a SiCx H Thin filmAtıf 1 · OpenAlex
6. 2011 Investigation of Electrical Transport in PECVD grown a SiCx H Thin FilmAtıf 1 · OpenAlex